Czasopismo | ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA | Rocznik 2013 - zeszyt 7

Tutorial on epitaxy of semiconductor materials

nr katalogowy: 77846

Since the first transistor was realized in 1947 by John Bardeen, Walter Brattain and William Schokley at Bell Laboratories constructions of the electronic devices have become more and more complicated. The technology of the electronic devices was continuously developed in order to satisfy the needs of new device constructions. Finally, the semiconductor technology had to meet the requirements of optoelectronic and photonic devices. The technology of the photonic devices demands employment of very pure high-grade source materials and advanced high-quality production systems with the purpose of providing nearly perfect structure of the grown materials used for device structure fabrication. Solid materials are often classified by the way the atoms are arranged within the solid. Amorphous materials are the materials, where atoms are placed at random. Materials in which atoms are placed in a highly ordered structure are called crystalline. Polycrystalline materials are materials with a high degree of shortrange order and no long-range order. Nowadays, all of this material types can be grown on different substrates by using different methods of growth. However, in case of some applications the technology of crystalline and amorphous structures can be combined as well. Nevertheless the primary interest of this article are crystalline semiconductors where atoms are placed in a highly ordered structure. Among the others, the technology of the crystalline semiconductor structures is the most demanding in many respects. To obtain the high quality semiconductor devices the growth of the structures has to be performed in specific, highly controlled conditions including ultra-high vacuum surroundings. Atomic structure of crystals For production of common electronic and optoelectronic devices typical semiconductor materials or compounds are used, mostly silicon, germanium, gallium nitride, gallium arsenide or indium phospide. There are man[...]

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