Czasopismo | ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA | Rocznik 2010 - zeszyt 9

Formation of Ni/Si based ohmic contacts to n-type 4H-SiC

nr katalogowy: 54288

Silicon carbide (SiC) became one of the most widely studied materials during last years[1-4, 6]. Its unique features (wide band gap, high chemical stability, high thermal conductivity, high critical field and high electron saturation velocity) offer many potential applications, particulary in high power devices or in devices operated under harsh environmental conditions. Implementation of SiC is limited by technology of the ohmic contact production. Although many efforts and experiments the mechanism of ohmic contact formation stays controversialv[ 9]. It was shown that nickel layer on SiC after high temperature annealing process forms low resistivity ohmic contact. The transition from rectifying to ohmic contact is accompanied with an appearance of nickel silicade phases. In the present work the importance of Ni2Si phase is reported. To investigate properties of that phase multilayered structure of silicon and nickel was deposited. The structure with the appropriate sequence of layers and their thicknesses was chosen based on our previous measurements [7, 10]. Namely, it was used the metallization consisted of thin Ni and Si layers with Si in the intimate contact with the 4H-SiC substrate. Structural and electrical properties of samples were studied during thermal processing. Experiment The substrate n-type 4H-SiC (0001), 0.14° off-axis substrate (CREE Inc.) with resistivity ρ = 0.074 Ωcm was used in experiments. The cleaning procedure of substrates consisted of boiling in organic solvents and followed by a sequential chemical etching in NH4OH:H2O2:H2O = 1:1:5 for 10 min, HCl:H2O2: H2O = 1:1:5 for 10 min and HF:NH4F:H2O = 2:7:1 for 3 min. Finally substrates were rinsed in deionized water. The schema of multilayered structure is shown in Fig.1a. Thin layers of Ni/Si/Ni/Si (32/29/32/29 nm) were deposited from Ni and Formation of Ni/Si based ohmic contacts to n-type 4H-SiC (Formowanie kontak[...]

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2010-9

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