Czasopismo | PRZEGLĄD ELEKTROTECHNICZNY | Rocznik 2019 - zeszyt 10

Przegląd metod czyszczenia powierzchni podłoży SiC

A review of SiC surface cleaning methods

10.15199/48.2019.10.35

nr katalogowy: 122738
10.15199/48.2019.10.35

Streszczenie

Zapewnienie wysokiego poziomu uzysku produkcyjnego w technologii półprzewodnikowej wymaga opracowania poszczególnych procesów technologicznych wytwarzania przyrządu oraz wysokiej jakości podłoża. Podstawowymi wskaźnikami jakości podłoży półprzewodnikowych jest gęstość określonego rodzaju defektów oraz poziom czystości powierzchni podłoży przed kolejnymi procesami. W niniejszym komunikacie dokonano przeglądu obecnego stanu wiedzy na temat metod przygotowania i czyszczenia powierzchni węglika krzemu

Abstract

Fabrication of an efficient, reliable and durable semiconductor device requires not only the development of specific technological processes used during its production, but also a high quality substrate. The quality of the substrate can be determined by the level of contamination of their surfaces and the presence of defects. They can interfere with proper operation or shorten the life of the instruments. This article reviews the current state of knowledge on the methods of preparation and cleaning of silicon carbide surfaces.

Słowa kluczowe

Keywords

Bibliografia

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