Czasopismo | PRZEGLĄD ELEKTROTECHNICZNY | Rocznik 2016 - zeszyt 9

Determination of CdSxSe1-x thick films optical properties from reflection spectra

10.15199/48.2016.09.23

nr katalogowy: 100511
10.15199/48.2016.09.23

Abstract. A method for determining the band gap value and the refractive index near the absorption edge from reflection spectra was tested for CdSxSe1-x films prepared using the screen-printing and sintering technique. Streszczenie: Przeanalizowano metodę wyznaczenia szerokości przerwy energetycznej i współczynnika załamania z pomiarów widma współczynnika odbicie warstw CdSxSe1-x otrzymanych metodami sitodruku i konsolidacji termicznej (sintering technique). (Wyznaczanie parametrów optycznych grubych warstw CdSxSe1-x z analizy widma odbicia). Keywords: semiconductors, CdSxSe1-x thick films, refractive index, reflection spectra. Słowa kluczowe: półprzewodniki, warstwy CdSxSe1-x, współczynnik załamania, widmo odbicia. Introduction The development of optoelectronics stimulates research of the photoelectric and optical properties of semiconductor films used in different optoelectronic devices [1-4]. The refractive index and the band gap value are some of the most important optical parameters of semiconductor films [5-6]. A method to determine the band gap value and the refractive index near the absorption edge of the thick films of semiconductor materials from optical reflection spectra, measured at different angles of incidence of the optical radiation, is theoretically justified and experimentally implemented in the present study. Verification of this method for CdSxSe1-x films of solid solution prepared using the screen-printing and sintering technique was done in the present work [7-9]. The direct band gap semiconductors like CdS, CdSe and their solid solutions are excellent materials for the development of optoelectronic and photovoltaic devices due to their high absorption coefficients and appropriate band gap [9-11]. A simple screen-printing method can be suitable for the production of low-cost large-area photosensitive devices [7-9]. Theory Let d be the thickness of the semiconductor film with a surface roughness smaller t[...]

Bibliografia

[1] Heavens O.S., Optical Properties of Thin Solid Films (Dover Publications Inc., New York, 1991)
[2] Shur M.S., Rumyant sev S.L., Gas ka R., Semiconductor thin films and thin film devices for electrotextiles, International Journal of High Speed Electronics and Systems. Vol.12 Iss.02 (2002), 371-390
[3] Mel l i kov E., Hi ie J., Al tosaar M., Powder materials and technologies for solar cells, International Journal of Materials and Product Technology. Vol.28 Iss.3-4 (2007), 291-311
[4] Liang Li, Hao Lu, Zongyin Yang, Limin Tong, Yoshio Bando, Golberg D. , Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells, Advanced Materials. Vol.25 Iss.8 (2013), 1109-1113
[5] Lopez N., Reichertz L.A., Yu K.M., Campman K., Walukiewic z W., Engineering the electronic band structure for multiband solar cells, Physical Review Letters. Vol.106 Iss.2-14 (2011), 028701-1-4
[6] Ravindra N.M., Ganapathy P., Choi Ji., Energy gap- refractive index relations in semiconductors - An overview, Infrared Physics & Technology. Vol.50 (2007), 21-29
[7] Nakayama N., Matsumoto H., Nakano A., Ikegami S., Uda H., Yamashi ta T., Screen printed thin film CdS/CdTe solar cell, Japanese Journal of Applied Physics. Vol.19 No.4 (1980), 703-712
[8] Shaheen S.E., Radspinner R., Peyghambarian N., Jabbour Gh.E., Fabrication of bulk heterojunction plastic solar cells by screen printing, Applied Physics Letters. Vol.79 No.18 (2001), 2996-2998
[9] Kumar V., Sharma T.P., Structural and optical properties of sintered CdSxSe1-x films, Journal of Physics and Chemistry of Solids. Vol.59 Iss.8 (1998), 1321-1325
[10] Lu C., Zhang L., Zhang Y., Liu S., Liu G., Electrodeposition of CdSe layers of various thickness to improve the photocatalytic performance of the CdS/CdSe bilayer structure, Chalcogenide Letters. Vol.11 No.9 (2014), 425-431
[11] Kose S., Atay F., B i lgin V., A k yuz I., Ketenc i E., Optical characterization and determination of carrier density of ultrasonically sprayed CdS:Cu films, Applied Surface Science. Vol.256 Iss.13 (2010), 4299-4303
[12] Kumar V., Sharma S.Kr., Sharma T.P., Singh V., Band gap determination in thick films from reflectance measurements, Optical Materials. Vol.12 (1999), 115-119
[13] T i vanov M., Os t retsov E., Drozdov N., Surv i lo L., Fedotov A., Trofimov Yu., Mazanik A., Optical and photoelectrical properties of CdSxSe1-x films produced by screen-printing technology, Physica Status Solidi (b). Vol.244 No.5 (2007), 1694-1699
[14] Premaratne K., Akuranthilaka S.N., Dharmadas a I.M., Samanti l leka A.P., Electrodeposition using non-aqueous solutions at 170 °C and characterisation of CdS, CdSxSe(1-x) and CdSe compounds for use in graded band gap solar cells, Renewable Energy. Vol.29 Iss.4 (2004), 549-557
[15] Mural i K.R., Venkatachalama K., Electrical properties of sintered CdSxSe1-x films, Chalcogenide Letters. Vol.5 No.9 (2008), 181-186
[16] Saad A.M., Fedotov A.K., Mazanik A.V., Tarasik M.I., Yanchenko A.M., Posedko A.S., Survilo L.Y., Trofimov Yu.V., Kur i lovich N.F., Modification of electrical properties of CdSxSe1-x films by hard irradiation and nanostructuring, Thin Solid Films. Vol.487 Iss.1-2 (2005), 202-204
[17] Takeuchi M., Sakagawa Yo., Nagasaka H., Photoconduction and photovoltaic effects in sputtered CdS films, Thin Solid Films. Vol.33 Iss.1 (1976), 89-98
[18] Has sanien A.S., A kl A.A., Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films, Superlattices and Microstructures. Vol.89 (2016), 153-169
[19] Lisitsa M.P., Gudymenko L.F., Malinko V.N., Terekhova S.F., Dispersion of the refractive indices and birefringence of CdSxSe1-x single crystals, Physica Status Solidi (b). Vol.31 Iss.1 (1969), 389-399

Jeśli masz wykupiony/przyznany dostęp - zaloguj się. Skorzystaj z naszych propozycji zakupu!

Publikacja


e-Publikacja (format pdf) - nr 100511 "Determination of CdSxSe1-..." licencja: Osobista Produkt cyfrowy	10.00 zł

Zeszyt


PRZEGLĄD ELEKTROTECHNICZNY - e-zeszyt (pdf) 2016-9 licencja: Osobista Produkt cyfrowy	55.00 zł

Prenumerata

PRZEGLĄD ELEKTROTECHNICZNY - prenumerata cyfrowa
licencja: Osobista

Produkt cyfrowy
Nowość

762.00 zł

PRZEGLĄD ELEKTROTECHNICZNY - PAKIET prenumerata PLUS
licencja: Osobista

Szczegóły pakietu

Nazwa
PRZEGLĄD ELEKTROTECHNICZNY - PAKIET prenumerata PLUS (Prenumerata papierowa + dostęp do portalu sigma-not.pl + e-prenumerata)	1002.00 zł brutto 927.78 zł netto 74.22 zł VAT (stawka VAT 8%)

1002.00 zł

PRZEGLĄD ELEKTROTECHNICZNY - papierowa prenumerata roczna + wysyłka
licencja: Osobista

Szczegóły pakietu

Nazwa
PRZEGLĄD ELEKTROTECHNICZNY - papierowa prenumerata roczna	960.00 zł brutto 888.89 zł netto 71.11 zł VAT (stawka VAT 8%)
PRZEGLĄD ELEKTROTECHNICZNY - pakowanie i wysyłka	42.00 zł brutto 34.15 zł netto 7.85 zł VAT (stawka VAT 23%)

1002.00 zł

Zeszyt

2016-9

Twój Koszyk

Publikacja

Zeszyt

Prenumerata

Zeszyt

Czasopisma