Wyniki 1-2 spośród 2 dla zapytania: authorDesc:"Jan WAŚKIEWICZ"

Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory DOI:10.15199/48.2018.09.24

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The constant development of computer technology requires better and better memories, both operational and mass. The requirements for devices of these two types are different. Operational memories must be quick, first of all, and they do not have to be the cheapest and can be volatile. In turn, mass storage must have huge capacities, low production and operating costs, and be non-volatile and have long life time. The requirements for the speed of writing and reading information are lower here than for the operational memory. Existing memories have already reached practically their physical limits. Therefore, in recent years, we can observe increased research activity in the search for new materials and phenomena that could be used to build memory elements. The analysis of development trends in this area, carried out in [1, 2], led to the isolation of ten new technologies that could soon replace the traditional ones. In the field of mass storage, one of the most promising directions seems to be the use of the phenomenon of electro-resistive memory. This phenomenon occurs in many materials and at different temperatures (from 4 to 400K). Examples are oxide materials with a regular crystallographic structure, such as: TiO2 [3], NiO, Al2O3 [4,5], or having a more complex perovskite structure: YBa2Cu3O7-x [6-9], Bi2Sr2CaCu2O8+δ [10], Pr1-xCaxMnO3 [11], La1-xSrxCoO3 [12], SrTiO3 [13]. The latter also exhibit the properties of high-temperature superconductors (HTS). Superconducting materials have long tempt with low energy losses and high reaction rates. The simplicity of the design of the electro-resistive memory element allows its far-reaching miniaturization (~10nm), which leads to a significant increase in capacity and low production costs. The phenomenon of electroresistive memory is by nature non-volatile, so it does not require energy to store information. For recording and reading, currents of 10 μA are sufficien[...]

Resistive memory physical mechanism in a thin-film Ag/YBa2Cu3O7-x/Ag structure DOI:10.15199/48.2015.11.72

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This paper presents results of experimental research on the electro-resistance memory effect in a thin-film Ag/YBa2Cu3O7-x/Ag structure at temperatures of 78K to 300K. This phenomenon was explained by processes of destruction and recovery the oxygen-depleted layers situated close to electrodes and within the superconductor volume. The processes occur through ion electro-diffusion by numerous oxygen vacancies existing in perovskite-type materials. Streszczenie. W pracy przedstawiono wyniki badań doświadczalnych zjawiska pamięci elektrorezystancyjnej w strukturze cienkowarstwowej Ag/YBa2Cu3O7-x/Ag w temperaturach od 78K do 300K. Zjawisko to wyjaśniono procesami likwidacji i odtwarzania warstw zubożonych w jony tlenu, znajdujących się w sąsiedztwie elektrod oraz w objętości nadprzewodnika. Procesy te zachodzą na drodze elektrodyfuzji jonów poprzez liczne wakansy tlenowe obecne w materiałach typu perowskitu. (Mechanizm fizyczny pamięci rezystancyjnej w cienkowarstwowej strukturze Ag/YBa2Cu3O7-x/Ag). Keywords: high-temperature superconductors, electro-resistance memory effect, current and temperature characteristics, oxygen-ion electro-diffusion. Słowa kluczowe: nadprzewodniki wysokotemperaturowe, zjawisko pamięci elektrorezystancyjnej, charakterystyki prądowe i temperaturowe, elektrodyfuzja jonów tlenu. Introduction A long-lasting competition in the field of electronics in trying to achieve greater computer memory capacities comes across significant development difficulties. The ability of minimizing the sizes and the energy needed to record and read information in traditional RAM memories based on semi-conductors, and, consequently, the possibility of enlarging their capacity have already reached their apex. Thus, increased scientific activity in search of new materials and mechanisms that could be used to build elements of RAM memory can be observed recently. The analysis of development trends in this field, carried out in [1], has l[...]

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