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Suspended beams fabricated on GaAs substrates

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In the last decade an increasing interest in the fabrication of micromechanical structures based on III-V materials has been observed [1,2]. The most attractive feature of GaAs micromachining is that it allows monolithic integration of mechanical structure and active optical devices. The idea of suspended beam fabrication on GaAs substrate by anisotropic etching results from zinc blende stru[...]

Etching of Si(100) and (110) substrates in KOH solutions saturated and son-saturated with isopropyl alcohol


  Anisotropic etching of silicon is commonly used to fabricate spatial MEMS and MOEMS structures applied in micromechanics and optoelectronics. The most popular are KOH and TMAH solutions, both pure as well as containing different alcohol or surfactant additives. The additives to the basic solutions change the etching anisotropy and cause some reduction of etch rates of several crystallographic planes, like (110), (331) and (221) what is used to reduce the convex corners undercut. The solution of KOH with isopropyl alcohol (IPA) is currently the most frequently used in silicon anisotropic etching. The process is usually carried out in the solutions saturated with IPA since it guarantees stability of the solution composition and the best morphology of (100) plane which is the most commonly used in micromechanical devices [1]. In the paper, the results of etching in KOH solutions with IPA content below saturation are compared with the results of etching in KOH solutions saturated with IPA. The analysis of the etching process in these solutions may be useful for explaining the etching mechanism. Etching in KOH solutions saturated with isopropyl alcohol The etching experiments were carried out in a thermostated vessel at the temperature of 75ºC, with the use of mechanical stirring. The etching rates of (100) and (110) planes obtained in KOH and KOH saturated with IPA solutions are shown in Figs. 1 and 2. The morphologies of the surfaces obtained after the etching are shown in Figs. 3 and 4. The obtained results show that in pure KOH solutions with the concentration exceeding 7 mol, smooth Si (100) surfaces, etched with the Fig. 1. Etch rates of the silicon substrates Rys. 1. Szybkości trawienia podłoży 2 4 6 8 10 12 0,5 0,6 0,7 0,8 0,9 1,0 1,1 etch rate [um/min] KOH concentration [M] (100) KOH (100) KOH+IPA 2 4 6 8 10 12 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 etch rate [um/min] KOH concentration [M] (110) [...]

Komputerowa symulacja trawienia struktur przestrzennych w podłożach krzemowych o różnych orientacjach krystalograficznych

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Opracowanie aplikacji komputerowej symulującej przebieg procesu anizotropowego trawienia krzemu poprzedzono analizą kształtów struktur przestrzennych uzyskanych doświadczalnie w wyniku trawienia podłoży o różnych orientacjach krystalograficznych. Symulację przeprowadzono dla trawienia w roztworach wodorotlenku potasu nasyconych związkami organicznymi z grupy alkoholi. Stworzenie takiej aplik[...]

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